Abstract: A new methodology is presented and allows for the integration of Monte Carlo electron distributions into the Sentaurus workflow for the development of electron detectors applied to ...
Abstract: A silicon carbide shielded fin-shaped gate metal-oxide-semiconductor field effect transistor (SF-MOS) is proposed in this letter, which utilizes a well-grounded p-region to shield the ...
Customer stories Events & webinars Ebooks & reports Business insights GitHub Skills ...
Designed and Developed GAA JFET in sentaurus tcad in nano scale - Marty80s/Gate-all-around-Junction-Field-effect-transistor ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback