DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/2113be/static_random_acce) has announced the addition of the "Static Random ...
Low power Static Random-Access Memory (SRAM) design remains at the forefront of research in modern electronics due to its critical role in minimising energy consumption while maintaining high ...
The 23LCV512 is a 512 kbit SPI serial static random-acess memory (SRAM) with battery backup and SDI interface. This device features uses low power CMOS technology and features unlimited read and write ...
Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...
Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...
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