Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...

Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

FinFET transistors are now in production at the major foundries, having gone from drawing board to products on the shelf in record time. FinFET adoption has been growing steadily because they deliver ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

Infineon Technologies has announced that its researchers have completed testing of a full integrated circuit built with multigate FinFet transistors. Infineon Technologies has announced that its ...

The IC industry is already weeding out the candidates. In 2005, the Semiconductor Research Corp. (SRC), a chip R&D consortium, launched the Nanoelectronics Research Initiative (NRI), a group that is ...