Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of ...
LONDON — Belgian research organization IMEC has extended its work on 32-nm CMOS device scaling to include a project on DRAM MIMCAP (metal-insulator-metal capacitors) process technology. The group says ...
TL;DR: Samsung's 1c DRAM yield for next-gen HBM4 memory has improved from 0% to around 40%, enabling planned mass production later this year. Design restructuring and process optimizations enhanced ...
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